Performance Improvement of FinFET using Nitride Spacer
نویسندگان
چکیده
The Double Gate FinFET has been designed for 90nm as an alternative solution to bulk devices. The FinFET with independent gate (IDG) structure is designed to control Vth. When the Vth is controlled the leakage current can be decreased by improving its current driving capability. The metal used for the front gate and back gate is TiN. Here the device performance is compared using nitride spacer and device without spacer. The work function is a very important consideration in the selection of metal for the gate structure and also it affects the Vth and the performance of a device. Keywords— DG FinFET, DIBL, SS
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تاریخ انتشار 2013